Suppression of carrier accumulation at the epilayer/substrate interface of InSb grown on GaAs and InP

Carrier accumulation at the heterointerface of InSb/substrate was investigated. Various surface indexes of the zinc-blende structure lattice were used as substrate for InSb growth and carrier concentration dependence on these indexes was recognized. This concentration increased in proportion to the dangling bond density, and the suppression of this accumulation was successfully performed by using a (111) interface, which had the lowest dangling bond density among all the surface indexes.