Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of /spl mu/A were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.