Wide bandgap semiconductor RF power devices

AlGaN HFET's have achieved the highest f/sub max/ 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). On the other hand, 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four SIT's with a total source periphery of 94.5 cm has been demonstrated.