Photoluminescence from GaN implanted with isoelectronic phosphorus and bismuth

Photoluminescence spectra, excitation spectra and decay kinetics of epitaxial GaN layers grown by MOCVD on sapphire substrates and implanted by isoelectronic impurities P and Bi were investigated. Post implant annealing up to 1150/spl deg/C, and different duration time was done in a tube furnace under flowing NH/sub 3/ or N/sub 2/ using proximity cap method to recover implantation damages. The PL of GaN:P shows strong emission peaked at 423 nm-428 nm with modulated structures that depend on annealing condition. The PL of GaN: Bi shows luminescence transitions, observable in a wide temperature range from 9 K to 300 K. Further, we develop the luminescence models that describe the recombination and quenching processes.