Electronic properties of MBE grown GaAs homointerfaces fabricated using the As cap deposition/removal technique

High quality interfaces are the workhorse of the semiconductor industry. Structural and electronic interface properties have a significant impact on device performance. This paper investigates the effect of the As cap deposition/removal process on electronic interface properties. The electronic interface properties were investigated by photoluminescence power spectroscopy. It was found that the As cap deposition/removal process with wafer storage in air causes significant degradation of the electronic interface properties (N/sub it//spl ges/10/sup 11/ cm/sup -2/) although structural degradation of the GaAs surface could not be observed. Thus, the impact on electronic interface properties needs to be considered when designing electronic or optoelectronic devices using the As cap deposition/removal process.