Spin-Orbitronics Memory Device With Matching and Self-Reference Functionality

Spin–orbit torque generated by spin-torque interaction provides a new writing mechanism for spintronic devices. This paper investigates spintronic memory devices for match-in-space, content addressable, and self-reference applications, utilizing spin–orbit torque generated by spin-torque interaction combined with the conventional spin torque generated by magnetization polarization. New system and device solutions are proposed for targeting different spintronic technology development stages. These proposals include spin content addressable memory (CAM) structure of DRAM cell with embedded MRAM, dual spin Hall magnetic tunneling junction CAM device, and spin-orbitronics memory device, capable of multi-bit match-in-space and single-bit nondestructive self-reference functionality.