A highly miniaturized front-end HIC for 1.9 GHz bands

A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was dip-chip bonded on a ceramic substrate with matching circuits on its surface. New technologies such as 0.5 /spl mu/m gate buried p-layer MESFETs, on-chip high-dielectric constant capacitors, and intermediate tuned circuits have enabled miniaturization and low power-consumption at the same time. The fabricated HIC measured only 3.5/spl times/4.0/spl times/1.0 mm which corresponded to a 64% reduction from the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, noise figure of 5.1 dB, and image rejection ratio over 20 dBc were obtained for the new HIC at 1.9 GHz, 3.0 V, and 4.5 mA of power supply.