Modeling of thermal behavior in the amorphous silicon thin film transistors

This paper proposed a two-dimensional thermal impedance model for amorphous silicon thin film transistors (a-Si:H TFTs) from a system of coupled energy equations, heat flowing equations and boundary conditions. By using of this model, the channel temperature distribution and thus the maximum channel temperature can be calculated. This model can be applied to describe the thermal behavior and thermal reliability of a-Si:H TFTS in the design phase.