Simulation and investigation of a back-triggered 6H-SiC high power photoconductive switch

This paper has investigated the performance of a linear, 6H-SiC high power photoconductive semiconductor switch. A three-dimensional device modeling with SILVACO ATLAS tools was used to model the optically initiated 6H-SiC switch. The 6H-SiC PCSS device is designed in a rear-illuminated, radial switch structure. The material properties of vanadium compensated 6H-SiC PSCC have been analyzed for breakdown, photocurrent profile such as rise and fall time in terms of their applications as a photoconductive switch at high bias conditions. This structure and also new type of illumination extends the blocking voltage by reducing the peak electric field near electrodes. In this presentation the effect of different trap concentrations on dark I–V characteristics have been reported. Also effect of different bias voltages, device thickness, different optical pulse wavelengths and optical power density on transient simulation have been investigated