GaN power amplifiers design using genetic neural network model

A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented. The model has been demonstrated by designing linear power efficient amplifier. Two different approaches have been followed. The first approach is based on linear class AB amplifier with Doherty efficiency enhancement technique. The second approach depends on high efficiency switching-mode amplifier with simple feedback linearization.