A comparison between BIMOS device types

This paper deals with the comparison of three types of BIMOS transistors (cascade, cascode, and parallel combinations of MOSFET and bipolar transistors). The first section of the paper presents device I-V relations for the cascade (Darlington) combination for devices rated between 80V and 700V. The second section of the paper deals with the comparison of all three BIMOS device types together with the discrete MOS and bipolar transistors. The comparison is based on the maximum current density limited by keeping the power dissipation to under lOOW/cm². Included in this analysis are losses due to conduction as well as switching.