The experimental study of THz image sensor in 0.18 µm CMOS technology

In this study, four different types of power detectors are implemented in 0.18 µm CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common-gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.