Computationally Comprehensive and Efficient Generalized Poisson's Solution for Better Nanoscale SOI MOSFET

In this paper, for the first time, a computationally comprehensive and efficient generalized Poisson's solution is derived for better nanoscale SOI MOSFET and performance is analyzed for various gate dielectric materials to optimise / predict the better performance. Earlier methods employed for solving the Poisson's equation rigorously for independent gate transistors and long channel asymmetric establish in potential models. But those potential models contain multiple intercoupled implicit equations which are to be solved self-consistently thereby establishing that those models are clearly inefficient for compact modelling. In this work, a novel rigorous method for solving PE has been described to get the potential profile of a single gate SOI MOSFET that incorporates a single implicit equation. The Poisson's solution so obtained in the present work is found to be computationally more efficient for related circuit simulation compared to earlier developed solutions.