A simple analytical Variable Barrier Transistor drain current model

In this paper we present, a simple analytical model for the computation of the drain current in a new type of transistor, a VBT (Variable Barrier Transistor). A good agreement between our results and experimental data proves the accuracy of this model. The experimental measurements show that the I_on/I_off ratio of this device can be improved, as compared to the classical transistor. Our model reproduces these results.