Atomistic simulation of phase change memory during switching

A methodology to study phase-change memory programming at atomistic level during SET and RESET operations is presented. Based on the melt-quench scheme, the molecular dynamic for amorphization and crystallization of GeTe been investigated. The time evolution of the crystal structure under different annealing and quenching conditions has been demonstrated. The final structure under different SET and RESET conditions can be predicted using the proposed method.