Selective-Polysilicon Emitter, Self-Aligned Bipolar Structure for BiCMOS VLSI Applications

A new self-aligned bipolar structure, which features selectively deposited polysilicon emitter and non-recessed base, is proposed. High quality selective-polysilicon film, excellent submicron bipolar device characteristics, and improved bipolar hot-carrier immunity have been demonstrated. This bipolar process module is also readily interactable into a CMOS--base BiCMOS flow for deep submicron VLSI applications.