Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs

Achieving a low contact resistance for 2D materials is a critical challenge for device applications. In this work, the contact resistance of MoS
₂
FETs has been drastically reduced by five times from the reference data using an optimized TiO
₂
Fermi level de-pinning layer which reduced the effective Schottky barrier height to 0.1 eV. As a result, a very low contact resistance ~5.4 kΩ·μm was achieved without any doping technique.