1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R
_ON,SP
(5.12 mQ · cm
²
), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV
²
/R
_ON,SP
of 727 MW · cm
^-2
. The record high BV of 1.9 kV is attributed to the dual field-plate structure.