Problems of transfer of a figure of topology when forming 3D structures (the FinFET-technology of transistors)

Experimentally it is confirmed that PHE Si process in CCl2F2/O2 plasma is well compatible to a photoresistive mask on the basis of FP-383. Dependences of rate of PHE Si on value of flows of oxygen and freon, anode current, sample layout in the reactor, physical characteristics of a silicon sample, etching time are studied. The PHE Si optimum mode suitable for practical use is found.