Location and origin of traps in InGaP-GaAs by GR noise measurement and simulation

A thorough approach to the location and origin of traps generated in InGaP/GaAs heterojunction bipolar transistors (HBT) by low frequency noise characterization and reliable physics-based simulation is discussed. Physics-based simulation together with the low frequency equivalent short-circuit current noise sources (Sib, Sic) experimental results reveal an electron trap located at the 5-InGaP/GaAs heterointerface and at the InGaP/nitride interface. For the first time, power spectral density (PSD) curves of (Sib, Sic) in the 100 Hz to 1 MHz frequency range for current densities up to 20 kA/cm² are demonstrated and are in agreement with those obtained from physics-based simulation.