Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region

We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.