Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species

Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H⁺) and hydrogen molecular (H2). This model is based on the probability that the passivated dangling bonds at the interface of silicon-oxide release the hydrogen H or proton H⁺. This probability is expressed as a function of experimental parameters.