Simulation analysis of active clamping circuit with status feedback for HV-IGBTs

Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.