A cross-layer design framework and comparative analysis of SRAM cells and cache memories using 7nm FinFET devices

Seven FinFET devices optimized for 7nm technology along with three SRAM cells were evaluated and compared. The high_l device has the lowest OFF current and the highest ON/OFF current ratio. Moreover, 8T SRAM cell achieves the highest SNM which guarantees its robust operation. Hence, 8T SRAM cell using high_l devices is suggested as the choice of memory cell for the discussed 7nm FinFET process.