28 nm FD SOI Technology Platform RF FoM

This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (f_T) and the maximum oscillation frequency (f_max), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.