Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure

A 2.5k V-1.8 kA advanced type power pack IGBT has been developed using an original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of collector current I/sub c/=6600 A, peak collector voltage V/sub c(peak)/=2400 V, junction temperature T/sub j/=125/spl deg/C and the wide SCSOA of V/sub cc/=1800 V, I/sub c/=10000 A, T/sub j/=125/spl deg/C, t/sub w/=15 /spl mu/s are realized. This high electrical ruggedness is obtained by decreasing the operational imbalance between chips.