The Impact of the Polarization Orientation on Laser SEE Modeling in Complex ICs

Numerical and experimental evaluation of the influence of laser radiation polarization orientation on ionization response of 180-nm and 90-nm CMOS ICs is performed. Comparative research is carried out to determine how the polarization of various sized laser beams affects the parameters of IC ionization response. The necessity of considering the orientation of laser radiation polarization for laser local radiation effect simulation is shown.