Phosphorus-implanted high-voltage n/sup +/p 4H-SiC junction rectifiers

In this paper, we report the fabrication and characterization of phosphorus-implanted 4H-SiC n/sup +//p junction rectifiers. Sheet resistance measurements of the implanted layers indicated values as low as 160 /spl Omega///spl square/. The forward characteristics of these diodes obey a generalized Shockley-Noyce-Sah (SNS) multiple-trap recombination model with 4 shallow levels and 1 deep level. Close-to-ideal avalanche breakdown voltage with a positive temperature coefficient is observed. The high-level injection lifetime has been extracted to characterize the switching behaviour of these diodes.