Temperature dependent behaviour of silicon power semiconductors-a new physical model validated by device-internal probing between 400 K and 100 K

A new physical model for characterization of the temperature dependent operation of power semiconductor devices is presented. It is based on the application of a new continuity equation for description of the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly with regard to EHS (electron hole scattering), are strictly taken into account, even the temperature conditioned effective ionization of doping atoms. The model is validated by FCA (free carrier absorption) experiments at temperatures between 100 K and 400 K.