A new lateral insulated base emitter switched thyristor

In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature.