A high performance plasma display panel driver IC using SOI

In this paper, we demonstrate an advanced 200 V-class plasma display panel scan driver IC using dielectric isolation, which utilizes bonded SOI and trench isolation, and a lateral IGBT (LIGBT). We have accomplished a large reduction in chip size compared with ICs fabricated on a junction isolated wafer and have obtained good output characteristics by optimizing device parameters. Moreover, original techniques to improve the blocking capability of the integrated LIGBT and lateral p-channel MOSFET have been included in our fabricated IC and are also described in this paper.