An analytical model for the field distribution of SIPOS-field-plate triple RESURF LDMOS

An analytical model based on 2D Poisson solution for the field distributions of the triple RESURF LDMOS with an ohmic behavior SIPOS layer is proposed. This model allows calculation of all the interface electric fields in the drift region in terms of the device parameters including the doping concentration and thickness. The avalanche breakdown voltage of the device can be predicted by a simplified equation only relevant with the doping concentration under given thickness parameters and a critical electric field. All analytical results are supported by the simulation results obtained from TCAD software Atlas.