On-wafer deembeedding techniques with application to HEMT devices characterization

Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-load+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-load+c method on high frequency.