Full-printed OTFT modeling: Impacts of process variation

In this work, the modeling of organic thin film transistors (OTFT) is presented. The transistors were manufactured with a full printed technique and the modeling was done using the A-Si: H TFT model. Once the extraction procedure validated, the extraction was performed on a sample of OTFTs. This permits to obtain the scattering of each parameter. This dispersion correlated to ideal statistic function permitted to carry out some Monte-Carlo simulations and then to reach a better modeling of different circuits. The simulated results show a good matching with measurements performed on organic current mirrors.