An improved compact model for radiation effect characterization in SOI MOSFETs

An improved compact model for radiation effect characterization in SOI MOSFETs is presented. This model is proposed by considering the threshold voltage degradation as a function of the total dose. The standard Berkeley BSIMSOI3 Verilog-A code implemented in ICCAP software was applied as a basis for modelling work.The accuracy of the model has been verified by comparison of simulated and measured post-radiation device characteristics of partially depleted (PD) SOI MOSFETs.