The HiSIM compact models of high-voltage/power semiconductor devices for circuit simulation

We review the high-voltage/power device models of the HiSIM family of compact models for circuit simulation. The HiSIM-HV model for integrated lateral high-voltage MOSFETs as e. g. the lateral double-diffused MOS (LDMOS) and its extensions to vertical power-device structures like UMOS or SJ-MOS are given a special focus. Additionally extensions to reverse/forward recovery effects and advanced materials like SiC are presented.