Fin width influence on analog performance of SOI and bulk FINFETs

This paper presents an experimental comparison of the analog performance between a triple-gate FinFET fabricated on Bulk (BFF) and on Silicon-On-Insulator - SOI (SFF) substrates. This comparison was performed based on the drain current, subthreshold swing, transconductance, output conductance and finally the intrinsic voltage gain. For narrow fin width, the SFF presents better performance than BFF, while for wider fins, the BFF showed to be more optimized than SFF, due to the existence of a parasitic back transistor in the SOI device.