Development of a Model for a Microwave GaInP\/GaAs HBT

This article presents the development of a nonlinear model for a microwave gallium indium phosphide (GaInP)/gallium arsenide (GaAs) heterojunction bipolar transistor (HBT). This model tied for first prize in the Microwave Transistor Modeling student competition held during the 2014 IEEE Microwave Theory and Techniques Society International Microwave Symposium (IMS2014) in Tampa, Florida.