Analysis and simulation of AlGaN/GaN Single Quantum Well Transistor Laser in ultra-violet band

The performance and characteristics of an AlGaN/GaN Single Quantum Well Transistor Laser with 336 nm wavelength at room temperature has been analyzed in this paper for the first time. A charge control model which is based on coupled rate equations has been used for modeling. Using simulation, The Optical Frequency Response of this device has been exploited and the bandwidth of 25 GHz and Resonance Peak of 4 dB at 15 GHz has been achieved for this device. The base width in this work is 225 nm with 15 nm Quantum Well width.