A novel CMOS-memristor based inverter circuit design

Computers transform to the smaller, faster and more reliable devices year by year. Accordingly designing more efficient logic gates, as the basic blocks of the VLSI chips, are essential for circuit designers. Since the integration reached to its limits through the conventional technologies mainly the CMOS based VLSI designs the quest for the novel promising technologies was commenced. Memristor is a passive element that has been fabricated recently and taken increasing attentions. Less area and non-volatility are the most important properties of this element. Also Memristors compatibility for fabrication over CMOS structures makes it as a breakthrough for the VLSI design enhancement. Memristor based logic computation are developed primarily. This paper presents a novel CMOS-Memristor based inverter with acceptable performance and also has nonvolatile output. This feature makes this circuit to be utilized not only as an alternative for conventional inverter circuit but also as a SRAM memory cell with the capability of input negation for specific applications. This includes a 0.18um PMOS and two Memristors. The output voltage level, non-volatility and read/write time are analyzed and simulated with Hspice^©.