Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application

Temperature effect modelling and analysis have been carried out on 0.25 μm gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from − 40 to 150°C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including f
t
and f
max
were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.