Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

In this paper four possible structures of AlN/GaN HEMT and MOSHEMT have been investigated through extensive simulation by varying both oxide and AlN barrier layer thickness under the Gate Foot region. DC and RF characteristics are obtained and studied. Almost zero gate to source current is obtained in case of MOSHEMT structures which makes this device promising for low power applications. However, the HEMT structure possesses high gate capacitance of 40fF/μm and transconductance of 1.1mS/μm.