Comparison of elementary bipolar transistor degradations: Dose rate and combined experimental parameters effects

In this paper, are investigated the influences of experimental parameters such as dose rate, irradiation temperature and base-emitter bias upon the degradation of elementary NPN and lateral PNP transistors. Very low dose rate results (3 mrad(Si)/s) are included and compared with several sets of experimental conditions for high dose rate irradiations. A specific configuration, combining an elevated temperature and a moderate reverse bias applied to the emitter-base junction, was found to be reasonably consistent with the room-temperature, low dose-rate response.