1.55 µm GaInNAsSb/GaAs Ridge Waveguide Lasers and Semiconductor Optical Amplifiers for Photonic Integrated Circuits

This paper presents state-of-the-art results concerning 1.55 μm single quantum well (QW) GaInNAsSb/GaAs ridge waveguide (RWG) laser diodes and SOAs, which are expected to outperform traditional InP-based components in temperature characteristics due to the large conduction band offset between the GaInNAsSb QW and GaAs.