Unexpected effect in the conduction characteristic of P+SOI resistors when exposed to ESD

Summary form only given. Testing of the energy tolerance of the resistors is discussed. It was found that P+silicon resistors (1300 Omega /square) when used as input electrostatic discharge protection devices exhibit resistances roughly a factor of two higher than room-temperature values for capacitor voltages (human body model), on the order of several times lower at high capacitor voltages due to the intrinsic carrier effect which protects the silicon resistor by causing most of the capacitor energy to be dissipated in the source resistance.<>