Impact of Ge substrate on drain current of Trigate N-FinFET

In this paper, impact of lightly doped Ge substrate on drain current of Trigate N-FinFET has been investigated. The result obtained was compared with heavily doped Si substrate N-FinFET. The highest peak saturated drain current was found to increased by 25% in input characteristics and 8% in output characteristics. The fin height kept constant, hence without affecting the area consumed. The simulation has been done using VISUAL TCAD.