High-performance 630-nm Band AlGaInP Strained Multiple Quantum Well Laser Diodes With A Multiquantum Barrier

630-nm band AlGaInP laser diodes are important as light sources for optical information systems such as high-density optical discs, bar-code readers, laser printers, and so on, and as a replacement for the He-Ne gas laser. Recently, highly reliable 630- nm band laser diodes have been developed by introducing a single quantum well (SQW) active layer [l], a strained multiple quantum well (S-MQW) active layer [2-31, and an SMQW active layer with a multiquantum barrier (MQB) [4]. However, 630-nm band laser diodes with high-power, high-temperature operating characteristics and high reliability have not yet been reported. This paper reports on transverse-mode stabilized 630-nm band tensile S-MQW laser diodes incorporating an MQB. The lasers have been operating stably for more than 500 h under 20 mW at 50°C