Packaging SiC power semiconductors — Challenges, technologies and strategies

In this paper a comprehensive review on SiC power module challenges and technology approaches is given. These challenges originate from SiC-specific reduced chip area, from high power and high loss density operation, from high temperature capability, from fast switching transients and from high electric field operation. New approaches based on advanced integrated cooling, low-profile integrated topside bonding and low-inductance architectures are outlined and discussed.