Pockels effect study in strained silicon Mach-Zenhder interferometer

We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from X_xxy⁽²⁾ = 74 ± 25 pm/V to X_xxy⁽²⁾ = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.