A novel non-contact s-parameter measurement method for sub-MMW multi-port on-wafer devices

The increasing interest in the development of micromachined components for sub-MMW and terahertz applications calls for a reliable and accurate measurement method for characterization of such components. The conventional on-wafer measurement technique using GSG probes, which require physical contact, are subject to wear and damage of the probe tips due to repeated use. This results in significant measurement errors at sub-MMW and higher frequencies. In addition, characterization of multi-port components using two-port measurement systems require independent measurements of pairs of ports one at a time while all the other ports are terminated with matched loads which are very difficult to realize at sub-MMW and terahertz bands.